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inchange semiconductor product specification silicon npn power transistors BD233 bd235 bd237 description ? ? with to-126 package ? complement to type bd234 /236 /238 applications ? for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD233 45 bd235 60 v cbo collector-base voltage bd237 open emitter 100 v BD233 45 bd235 60 v ceo collector-emitter voltage bd237 open base 80 v v ebo emitter -base voltage open collector 5 v i c collector current (dc) 2 a i cm collector current-peak 6 a p c collector power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BD233 bd235 bd237 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 0.6 v v be base-emitter on voltage i c =1a ; v ce =2v 1.3 v BD233 45 bd235 60 v ceo(sus) collector-emitter sustaining voltage bd237 i c =0.1a; i b =0 80 v BD233 v cb =45v; i e =0 bd235 v cb =60v; i e =0 i cbo collector cut-off current bd237 v cb =100v; i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =150ma ; v ce =2v 40 h fe-2 dc current gain i c =1a ; v ce =2v 25 f t transition frequency i c =250ma; v ce =10v 3 mhz
inchange semiconductor product specification 3 silicon npn power transistors BD233 bd235 bd237 package outline fig.2 outline dimensions

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